DocumentCode :
3494952
Title :
Temperature Dependent Dielectric Absorption of MIM Capacitors: RF Characterization and Modeling
Author :
Riess, P. ; Baumgartner, P.
Author_Institution :
Infineon Technol., Munich
fYear :
2006
fDate :
Sept. 2006
Firstpage :
459
Lastpage :
462
Abstract :
This paper presents dielectric absorption measurements of a MIM capacitor between 100Hz and 10GHz over a broad temperature range. The activation energy of the dielectric absorption is extracted and a new model, taking the temperature dependency of the dielectric absorption into account, is presented. Finally the impact of the temperature dependent dielectric absorption on the MIM capacitors RF performance and MIM capacitor based circuit simulation is discussed
Keywords :
MIM devices; absorption; capacitors; dielectric measurement; semiconductor device measurement; semiconductor device models; 100 to 10E9 Hz; MIM capacitors; RF characterization; RF modeling; activation energy; dielectric absorption measurements; temperature dependent dielectric absorption; Absorption; Capacitance measurement; Dielectric materials; Dielectric measurements; Frequency measurement; MIM capacitors; Parasitic capacitance; Radio frequency; Size measurement; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European
Conference_Location :
Montreux
ISSN :
1930-8876
Print_ISBN :
1-4244-0301-4
Type :
conf
DOI :
10.1109/ESSDER.2006.307737
Filename :
4099955
Link To Document :
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