Title :
Atomic scale modeling of boron transient diffusion in silicon
Author :
Caturla, M.J. ; Lilak, A. ; Johnson, M.D. ; Giles, M. ; De La Rubia, T. Diaz ; Law, M. ; Foad, Mageed
Author_Institution :
Lawrence Livermore Nat. Lab., CA, USA
Abstract :
We present results from predictive atomic level simulation of boron diffusion in silicon under a wide variety of implant and annealing conditions. The parameters for this simulation have been extracted from first principles approximation models and molecular dynamics simulations. The results are compared with experiments showing good agreement final cases. The parameters and reactions used have been implemented into a continuum-level model simulator
Keywords :
annealing; boron; diffusion; elemental semiconductors; ion implantation; molecular dynamics method; semiconductor doping; semiconductor process modelling; silicon; Si:B; annealing conditions; atomic level simulation; atomic scale modeling; boron diffusion; boron transient diffusion; continuum-level model simulator; first principles approximation models; implant conditions; molecular dynamics simulations; silicon; Boron; Computational modeling; Implants; Ion implantation; Kinetic theory; Monte Carlo methods; Predictive models; Semiconductor process modeling; Silicon; Simulated annealing;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1998.813853
