DocumentCode :
349498
Title :
Role of annealing time on junction depth for high dose phosphorus implants
Author :
Prussin, S. ; Bil, Christiaan A. ; Rendon, Michael J. ; Romig, Terry
Author_Institution :
California Univ., Los Angeles, CA, USA
Volume :
2
fYear :
1999
fDate :
36495
Firstpage :
1036
Abstract :
Twenty-two wafers were implanted with 5×1015 P cm -2 at 50 keV, one set of 11 with a beam current of 5.0 mA. The remaining 11 with a beam current of 0.5 mA. Wafers of each set were annealed at 800°C for 1, 2, 4, 8, 16, 30, 60, 120, and 240 secs. All wafers were evaluated by secondary ion mass spectrometry, transmission electron microscopy, sheet resistivity, thermal wave analysis and tapered groove profilometry. Transient enhanced diffusion was completed during the first 4 to 8 seconds. Loop dislocations were detected after 1 second of anneal, suggesting that transient enhanced diffusion was restricted by the absorption of the free interstitials by the growing loop dislocations
Keywords :
annealing; dislocation interactions; dislocation loops; electrical resistivity; elemental semiconductors; interstitials; ion implantation; p-n junctions; phosphorus; secondary ion mass spectra; semiconductor doping; silicon; transmission electron microscopy; 0.5 mA; 1 to 240 s; 5 mA; 50 keV; 800 C; Si:P; annealing time; beam current; free interstitials; high dose phosphorus implants; junction depth; loop dislocations; secondary ion mass spectrometry; sheet resistivity; tapered groove profilometry; thermal wave analysis; transient enhanced diffusion; transmission electron microscopy; Annealing; Conductivity measurement; Electron microscopy; Implants; Laboratories; Scanning electron microscopy; Silicon; Solids; Substrates; Transmission electron microscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
Type :
conf
DOI :
10.1109/IIT.1998.813857
Filename :
813857
Link To Document :
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