Role of annealing time on junction depth for high dose phosphorus implants

Twenty-two wafers were implanted with 5×10¹⁵ P cm ^-2 at 50 keV, one set of 11 with a beam current of 5.0 mA. The remaining 11 with a beam current of 0.5 mA. Wafers of each set were annealed at 800°C for 1, 2, 4, 8, 16, 30, 60, 120, and 240 secs. All wafers were evaluated by secondary ion mass spectrometry, transmission electron microscopy, sheet resistivity, thermal wave analysis and tapered groove profilometry. Transient enhanced diffusion was completed during the first 4 to 8 seconds. Loop dislocations were detected after 1 second of anneal, suggesting that transient enhanced diffusion was restricted by the absorption of the free interstitials by the growing loop dislocations