DocumentCode
349499
Title
In-situ observation of focused ion beam micromilled Si, SiO2 and GaAs
Author
Tanaka, Miyoko ; Furuya, Kazuo ; Saito, Tetsuya
Author_Institution
Nat. Res. Inst. for Metals, Tsukuba, Japan
Volume
2
fYear
1999
fDate
36495
Firstpage
1039
Abstract
A focused ion beam (FIB) interface attached to a column of 200 keV transmission electron microscope (TEM) was developed for in-situ micropatterning to semiconductors. TEM specimens of Si, SiO2 and GaAs were micromilled in the TEM during observation. Several figures were patterned with a 25 keV Ga+-FIB of 0.2 μm beam diameter at room temperature. The effect of FIB irradiation on the structural changes was observed simultaneously by a TV-rate video camera and sequentially by regular films. FIB micropatterning to semiconductor specimens caused amorphization and Ga injection. The excess Ga in the specimens precipitated as metastable solid γ-phase for Si and as liquid phase for GaAs
Keywords
III-V semiconductors; amorphisation; elemental semiconductors; focused ion beam technology; gallium arsenide; ion beam lithography; micromachining; precipitation; silicon; silicon compounds; sputter etching; surface topography; transmission electron microscopy; 0.2 mum; 20 C; 25 keV; FIB micropatterning; Ga injection; GaAs; In-situ observation; Si; SiO2; TEM; amorphization; focused ion beam interface; focused ion beam micromilled GaAs; focused ion beam micromilled Si; focused ion beam micromilled SiO2; in-situ micropatterning; liquid phase; precipitated metastable solid γ-phase; room temperature; semiconductors; structural changes; transmission electron microscopy; Cameras; Conducting materials; Electron beams; Etching; Gallium arsenide; Ion beams; Metastasis; Phase change materials; Solids; Transmission electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location
Kyoto
Print_ISBN
0-7803-4538-X
Type
conf
DOI
10.1109/IIT.1998.813858
Filename
813858
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