Solid-phase epitaxial crystallization of a B-delta-doped superlattice in Si

Author

Elliman, R.G. ; Hogg, S.M. ; Kringhoj, P.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

Volume

2

fYear

1999

fDate

36495

Firstpage

1055

Abstract

Time-resolved reflectivity (TRR) and secondary-ion mass-spectrometry (SIMS) are used to study the solid-phase-epitaxial-crystallization (SPEC) of amorphous Si layers containing a B delta-doped superlattice. The superlattice consists of three narrow B profiles (10 mn FWHM) separated by ~170 nm, each with a peak concentration of 1.3×1020 B.cm^-3. The SPEC velocity is shown to increase to a rate approximately three times that of intrinsic Si as the crystalline-amorphous interface passes through each B profile, the velocity enhancement closely following the B distribution, Diffusive broadening of the B profiles is also observed during SPEC. This is used to estimate the diffusivity of B in amorphous Si, which was found to be 2.6±0.5×10^-16 cm²/s at 600°C

Keywords

boron; crystallisation; diffusion; doping profiles; elemental semiconductors; reflectivity; secondary ion mass spectra; semiconductor epitaxial layers; semiconductor superlattices; silicon; solid phase epitaxial growth; time resolved spectra; 600 degC; SIMS; Si:B; amorphous Si layers; delta-doped superlattice; diffusive broadening; diffusivity; narrow B profiles; solid-phase epitaxial crystallization; time-resolved reflectivity; Amorphous materials; Crystalline materials; Crystallization; Molecular beam epitaxial growth; Photonic band gap; Reflectivity; Semiconductor device doping; Semiconductor process modeling; Superlattices; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology Proceedings, 1998 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-7803-4538-X

Type

conf

DOI

10.1109/IIT.1998.813862

Filename

813862