Title :
Silicon wire waveguide crossing with negligible loss and crosstalk
Author_Institution :
Laboratory of Optical Materials and Structures Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Russia
Abstract :
Current paper introduces efficient silicon wire waveguide crossing by means of vertical coupling of tapered Si wire with upper SU-8 polymer wide strip waveguide through a silica buffer. Numerical 3D simulations by FDTD proves that optimal structure of 70 μm length provided 98% efficiency for through pass and 99.9% efficiency for cross pass as well as negligible back reflection (−50 dB) and cross talk (−70 dB). Proposed waveguide crossing on thin silicon-on-insulator CMOS compatible structures could find multiple applications in photonics.
Keywords :
Silicon-on-insulator; numerical modeling; waveguide crossing;
Conference_Titel :
Actual Problems of Electronics Instrument Engineering (APEIE), 2012 11th International Conference on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4673-2842-5
DOI :
10.1109/APEIE.2012.6629163