DocumentCode :
3495055
Title :
High-Q integrated 3-D inductors and transformers for high frequency applications
Author :
Weon, Dae-Hee ; Jeon, Jong-Hyeok ; Kim, Jeong-II ; Mohammadi, Saeed ; Katehi, Linda P B
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Volume :
2
fYear :
2004
fDate :
6-11 June 2004
Firstpage :
877
Abstract :
Using a novel 3-D fabrication technology, we have demonstrated, for the first time, very high frequency and high quality factor (Q) inductors and transformers on Si substrate. On high resistivity Si, this technology achieves a quality factor of Q>60 for 1nH inductor at frequencies of 3 to 7 GHz. High efficiency high-Q transformers with coupling factors 0.6res<16 GHz). This technology is very simple and is fully compatible with Si and compound-semiconductor fabrication technologies and can be either implemented as a post-processing step or as a part of a vertical chip to inter poser packaging scheme.
Keywords :
Q-factor; S-parameters; chip scale packaging; high-frequency transformers; inductors; integrated circuit design; microwave integrated circuits; 3 to 7 GHz; 3-D fabrication; Si; Si substrate; coupling factors; high resistivity; high self-resonance frequency; high-quality factor integrated 3-D inductors; high-quality factor integrated 3-D transformers; poser packaging scheme; semiconductor fabrication; vertical chip; Chromium; Circuits; Dielectric substrates; Fabrication; Gold; Inductors; Q factor; Radio frequency; Tensile stress; Transformers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
ISSN :
0149-645X
Print_ISBN :
0-7803-8331-1
Type :
conf
DOI :
10.1109/MWSYM.2004.1339109
Filename :
1339109
Link To Document :
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