Title :
High-Q fused silica birdbath and hemispherical 3-D resonators made by blow torch molding
Author :
Cho, Jeon-Wook ; YAN, JIU DUN ; Gregory, Jeffrey A. ; Eberhart, Hans ; Peterson, Rebecca L. ; Najafi, Khalil
Author_Institution :
Center for Wireless Integrated MicroSensing & Syst. (WIMS2), MI, USA
Abstract :
This paper presents a novel 3-D fabrication process of microstructures using high-Q materials. The key feature of this process is the use of a blow torch that can provide intensive localized heat up to 2500°C in a very short time (<;10 sec), above the melting temperatures of many high-Q materials such as fused silica. Surface roughness of 5.3 Å is realized in fused silica, which is crucial for high optical and mechanical quality factors (Q). We demonstrate the fabrication of micro hemisphere and half-toroid (birdbath) geometries from 100μm-thick fused silica substrates. We also create micro birdbath resonators by batch-level releasing the birdbath shells and demonstrate one of the best mechanical Q and low stiffness and damping anisotropies among existing micro mechanical resonators. The birdbath resonator is promising for emerging applications such as micro rate-integrating gyroscope (μ-RIG).
Keywords :
Q-factor; gyroscopes; microcavities; microfabrication; micromechanical resonators; silicon compounds; surface roughness; μ-RIG; 3D fabrication process; blow torch molding; damping anisotropy; fused silica substrates; half-toroid geometries; hemispherical 3D resonators; high-Q fused silica birdbath 3D resonators; high-Q materials; mechanical quality factors; melting temperatures; microbirdbath resonators; microhemisphere fabrication; micromechanical resonators; microrate-integrating gyroscope; optical quality factors; stiffness anisotroy; surface roughness; Fabrication; Heating; Optical resonators; Silicon compounds; Substrates; Surface treatment;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2013 IEEE 26th International Conference on
Conference_Location :
Taipei
Print_ISBN :
978-1-4673-5654-1
DOI :
10.1109/MEMSYS.2013.6474206