DocumentCode :
3495141
Title :
Output power capability of class-E amplifiers with nonlinear shunt capacitance
Author :
Gaudó, Pilar Molina ; Bernal, Carlos ; Mediano, Arturo
Author_Institution :
Inst. de Investigacion en Ingenieria de Aragon, Zaragoza Univ., Spain
Volume :
2
fYear :
2004
fDate :
6-11 June 2004
Firstpage :
891
Abstract :
The nonlinearity of the shunt capacitance in a HF class-E power amplifier produces a switch peak voltage higher than expected, in particular at frequencies where the shunt capacitance is solely provided by the device parasitic. Peak values have to be accurately estimated in order to avoid device breakdown and to be able to choose a convenient and not too overestimated transistor for the application. Furthermore, the nonlinear behavior modifies the output power capability of a device in class-E operation. When dealing with a lossy nonlinear device, reducing the ON duty cycle of a design bellow 0.5 might help achieving higher frequencies in ideal class-E conditions, whereas increasing it results in higher output power and efficiency. For the first time, an analysis of peak voltage values and output power capability of a class-E amplifier is presented for several duty-cycles and nonlinearity parameters. Experimental results show good agreement with numerical analysis.
Keywords :
HF amplifiers; capacitance; power MOSFET; power amplifiers; semiconductor device breakdown; semiconductor device models; 13.56 MHz; HF class-E power amplifier; ON duty cycle; nonlinear shunt capacitance; power MOSFET; power capability; semiconductor device breakdown; switch peak voltage; Bellows; Electric breakdown; Frequency; Hafnium; High power amplifiers; Parasitic capacitance; Power amplifiers; Power generation; Switches; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
ISSN :
0149-645X
Print_ISBN :
0-7803-8331-1
Type :
conf
DOI :
10.1109/MWSYM.2004.1339114
Filename :
1339114
Link To Document :
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