DocumentCode
3495141
Title
Output power capability of class-E amplifiers with nonlinear shunt capacitance
Author
Gaudó, Pilar Molina ; Bernal, Carlos ; Mediano, Arturo
Author_Institution
Inst. de Investigacion en Ingenieria de Aragon, Zaragoza Univ., Spain
Volume
2
fYear
2004
fDate
6-11 June 2004
Firstpage
891
Abstract
The nonlinearity of the shunt capacitance in a HF class-E power amplifier produces a switch peak voltage higher than expected, in particular at frequencies where the shunt capacitance is solely provided by the device parasitic. Peak values have to be accurately estimated in order to avoid device breakdown and to be able to choose a convenient and not too overestimated transistor for the application. Furthermore, the nonlinear behavior modifies the output power capability of a device in class-E operation. When dealing with a lossy nonlinear device, reducing the ON duty cycle of a design bellow 0.5 might help achieving higher frequencies in ideal class-E conditions, whereas increasing it results in higher output power and efficiency. For the first time, an analysis of peak voltage values and output power capability of a class-E amplifier is presented for several duty-cycles and nonlinearity parameters. Experimental results show good agreement with numerical analysis.
Keywords
HF amplifiers; capacitance; power MOSFET; power amplifiers; semiconductor device breakdown; semiconductor device models; 13.56 MHz; HF class-E power amplifier; ON duty cycle; nonlinear shunt capacitance; power MOSFET; power capability; semiconductor device breakdown; switch peak voltage; Bellows; Electric breakdown; Frequency; Hafnium; High power amplifiers; Parasitic capacitance; Power amplifiers; Power generation; Switches; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2004 IEEE MTT-S International
ISSN
0149-645X
Print_ISBN
0-7803-8331-1
Type
conf
DOI
10.1109/MWSYM.2004.1339114
Filename
1339114
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