Title :
Defects remaining in Si after MeV ion implantation and annealing away from the peak of the nuclear energy deposition profile
Author :
Kögler, R. ; Skorupa, W. ; Yankov, R.A. ; Posselt, M. ; Danilin, A.B.
Author_Institution :
Forschungszentrum Rossendorf, Dresden, Germany
Abstract :
Damage has been observed in MeV-ion-implanted Si away from the maximum of the nuclear energy deposition profile, mainly around the half of the projected ion range, RF/2. Cu gettering has been employed for the detection of irradiation defects which are formed during annealing at temperatures between 700 and 1000°C. This damage is primarily created by the implanted ions on their trajectory and consists of intrinsic defects remaining so small that they have not yet been resolved. These defects undergo a defect evolution during annealing which results in a decrease of the width of the damage layer with increasing temperature and prolonged time of the annealing
Keywords :
annealing; copper; elemental semiconductors; getters; impurity-defect interactions; ion implantation; silicon; 700 to 1000 C; MeV ion implantation; Si:Si,Cu; Si:Si+,Cu; annealing; damage; defect evolution; gettering; Amorphous materials; Annealing; Electrons; Gettering; Ion implantation; Paramagnetic resonance; Rapid thermal processing; Semiconductor process modeling; Spectroscopy; Temperature;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1998.813878