Defects remaining in Si after MeV ion implantation and annealing away from the peak of the nuclear energy deposition profile

Damage has been observed in MeV-ion-implanted Si away from the maximum of the nuclear energy deposition profile, mainly around the half of the projected ion range, R_F/2. Cu gettering has been employed for the detection of irradiation defects which are formed during annealing at temperatures between 700 and 1000°C. This damage is primarily created by the implanted ions on their trajectory and consists of intrinsic defects remaining so small that they have not yet been resolved. These defects undergo a defect evolution during annealing which results in a decrease of the width of the damage layer with increasing temperature and prolonged time of the annealing