Influence of ambient nitrogen pressure on the property of zirconium nitride thin films in ion beam assisted deposition

Author

Gotoh, Y. ; Shiigi, T. ; Nagao, M. ; Tsuji, H. ; Ishikawa, J.

Author_Institution

Dept. of Electron. Sci. & Eng., Kyoto Univ., Japan

Volume

2

fYear

1999

fDate

36495

Firstpage

1125

Abstract

Influence of ambient nitrogen pressure on the property of zirconium nitride thin films in ion beam assisted deposition was investigated. Deposition was performed both with and without the excess nitrogen gas near the substrate. The electrical resistivity and the crystallinity of the deposited films were investigated as a function of the substrate temperature. As a result, it was shown that the electrical resistivity of the films deposited at the substrate temperature lower than 400°C, rapidly increased with a decrease in the substrate temperature. The results could be summarized that the high ambient pressure influences the film property even in the ion beam assisted deposition

Keywords

electrical resistivity; ion beam assisted deposition; metallic thin films; wear resistant coatings; zirconium compounds; 400 C; ZrN; ZrN film; ambient nitrogen pressure; crystallinity; electrical resistivity; ion beam assisted deposition; substrate temperature; Cathodes; Conducting materials; Ion beams; Ion sources; Nitrogen; Sputtering; Substrates; Temperature; Transistors; Zirconium;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology Proceedings, 1998 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-7803-4538-X

Type

conf

DOI

10.1109/IIT.1998.813880

Filename

813880