DocumentCode :
3495238
Title :
GaAs/AlGaAs multiple quantum well lasers grown by molecular beam epitaxy
Author :
Zhang, D.H. ; Li, C.Y. ; Yoon, S.F. ; Raman, A.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
fYear :
1996
fDate :
26-28 Nov 1996
Firstpage :
180
Lastpage :
184
Abstract :
The influence of substrate misorientation on the quality of the active region with low AlAs portion barrier layers and the performance of GaAs/AlGaAs graded index separate-confinement triple-quantum-well lasers grown under nonoptimal conditions have been investigated. It is found that the threshold current could be reduced from 32.5 mA to 15.7 mA by tilting the substrate 6° and the high quality lasers show a characteristic temperature as high as 260°C, indicating a high output stability. The luminescence results reveal that carbon impurity, like oxygen, could also be incorporated and trapped at AlGaAs/GaAs interfaces during growth and cause roughness, resulting in excessive scattering and loss and thus a high threshold current. Substrate misorientation for 6° toward ⟨111⟩A could reduce the carbon impurity to an unobservable level
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; impurity distribution; laser stability; molecular beam epitaxial growth; photoluminescence; quantum well lasers; semiconductor growth; surface topography; 15.7 to 32.5 mA; 260 C; C impurity; GRINSCH triple-quantum-well lasers; GaAs-AlGaAs; GaAs/AlGaAs multiple quantum well lasers; O impurity; active region quality; characteristic temperature; high output stability; loss; low AlAs portion barrier layers; luminescence results; molecular beam epitaxy; nonoptimal conditions growth; roughness; scattering; substrate misorientation; threshold current; Gallium arsenide; Impurities; Laser stability; Molecular beam epitaxial growth; Notice of Violation; Optical scattering; Quantum well lasers; Substrates; Temperature; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on
Conference_Location :
Penang
Print_ISBN :
0-7803-3388-8
Type :
conf
DOI :
10.1109/SMELEC.1996.616478
Filename :
616478
Link To Document :
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