Title :
Photoresist integrity and outgassing effects during plasma immersion ion implantation
Author :
Bernstein, James D. ; Whiteside, Donna M. ; Rendon, Michael J.
Author_Institution :
Semicond. Equip. Div., Eaton Corp., Beverly, MA, USA
Abstract :
Plasma immersion ion implantation (PIII) has been evaluated for process compatibility with photoresists. The effects of non-mass-separated ion implantation into bare Si, soft-baked (SE), hardbaked (HE), and UV/baked (UVB) patterned photoresist wafers are discussed. Outgassing of the photoresist can cause co-implantation of unintended species since the plasma will ionize these by-products. SIMS analysis was used to characterize dopant profiles and implanted C, O, and N from outgassed photoresist species. Acceptable levels of carbon are shown for a range of implants. Correlation between RGA and SIMS data shows that UVB photoresist outgasses increased amounts of CO and CO2 during PIII implantation compared to the SB and HB photoresist. The PIII implants showed no damage to photoresist features or dimensions, as quantified with SEM cross-sectional analysis
Keywords :
doping profiles; elemental semiconductors; impurity distribution; ion implantation; outgassing; photoresists; plasma materials processing; scanning electron microscopy; secondary ion mass spectra; semiconductor doping; silicon; CO; CO2; RGA; SEM cross-sectional analysis; SIMS analysis; Si:C,O,N,CO,CO2; UV/baked photoresist wafers; UVB photoresist; bare Si; co-implantation; dopant profiles; hard-baked patterned photoresist wafers; implanted C; implanted N; implanted O; nonmass-separated ion implantation; outgassed photoresist species; outgassing effects; photoresist integrity; plasma immersion ion implantation; process compatibility; soft-baked patterned photoresist wafers; Coatings; Filtering; Implants; Ion implantation; Magnetic analysis; Magnetic separation; Plasma immersion ion implantation; Plasma measurements; Resists; Voltage;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1998.813901
