Using dopant activation of implanted wafers for low temperature (400°C-600°C) measurement in CVD equipment design

Author

Borland, John O. ; Galewski, Carl

Author_Institution

Varian Semicond. Equip., Sunnyvale, CA, USA

Volume

2

fYear

1999

fDate

36495

Firstpage

1211

Abstract

We report on a method of using dopant activation Rs measurements on implanted wafers to determine actual wafer temperature and wafer heating response in order to characterize CVD chamber/heater design. We compared boron, antimony and phosphorus dopant species and found phosphorus to work best due to good amorphization of the silicon surface after implantation with complete dopant activation after 7 minutes annealing in the CVD chamber. Activation energies between 1.5 to 2.5 eV were measured over a temperature range of 420°C to 550°C for the 3 dopant species. With this technique full wafer mapping of the wafer thermal response can be obtained for designing CVD chambers/heaters

Keywords

annealing; antimony; boron; chemical vapour deposition; elemental semiconductors; ion implantation; phosphorus; semiconductor doping; semiconductor growth; semiconductor thin films; silicon; temperature measurement; 400 to 600 C; 7 min; CVD chamber/heater design; CVD equipment design; Si:B; Si:P; Si:Sb; activation energies; amorphization; annealing; antimony; boron; dopant activation; dopant species; full wafer mapping; implanted wafers; phosphorus; temperature measurement; wafer heating response; wafer temperature; wafer thermal response; Annealing; Boron; Energy measurement; Heating; Implants; Silicon; Solids; Temperature distribution; Temperature measurement; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology Proceedings, 1998 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-7803-4538-X

Type

conf

DOI

10.1109/IIT.1998.813903

Filename

813903