Title :
Evaluation of plasma doping for sub-0.18 μm devices
Author :
Lenoble, D. ; Goeckner, M.J. ; Felch, S.B. ; Fang, Z. ; Galvier, J. ; Grouillet, A.
Author_Institution :
CNET, Meylan, France
Abstract :
The current drive to develop 0.13 μm and smaller devices requires the development of alternate doping technologies, like plasma doping (PLAD) and Ultra-Low Energy (ULE) beamline ion implantation. This paper evaluates PLAD capabilities for 0.18 to 0.13 μm devices. Multiple process parameters and the resulting implant characteristics are examined. To determine Si and SiO2 stability during PLAD, substrates including bare Si wafers, wafers with SiO2 cap layers and photoresist patterned wafers are implanted. Anneals range from as-implanted to 950-1050°C for 10-30 s with various ambients. Implant profiles obtained by plasma doping are compared to those obtained with a low-energy beamline implanter (Varian SHC-80). A 490-Å junction depth with a sheet resistance ~400 Ω/□ is achieved
Keywords :
annealing; doping profiles; electrical resistivity; elemental semiconductors; ion implantation; plasma materials processing; semiconductor doping; semiconductor junctions; semiconductor-insulator boundaries; silicon; silicon compounds; 0.13 to 0.18 mum; 10 to 30 s; 490 A; 950 to 1050 C; PLAD capabilities; Si; Si-SiO2; SiO2; SiO2 cap layers; annealing; bare Si wafers; doping technologies; implant characteristics; implant profiles; junction depth; multiple process parameters; photoresist patterned wafers; plasma doping; sheet resistance; sub-0.18 μm devices; Annealing; Doping; Implants; Plasma applications; Plasma chemistry; Plasma devices; Plasma immersion ion implantation; Plasma properties; Plasma stability; Telecommunications;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1998.813907
