DocumentCode
3495397
Title
A novel p-channel dual action device for HVIC
Author
Watabe, Kiyoto ; Akiyama, Hidenori ; Terashima, Tomohide ; Okada, Masakazu ; Nobuto, Shinji ; Yamawaki, Masao ; Asai, Sotoju
Author_Institution
LSI Res. & Dev. Lab., Mitsubishi Electr. Corp., Hyogo, Japan
fYear
1997
fDate
28-30 Sep 1997
Firstpage
147
Lastpage
150
Abstract
A novel lateral power device termed p-channel Dual Action Device (p-ch DAD) is proposed and demonstrated in action experimentally. The new device has successfully increased on-state current without lowering the device breakdown voltage. 600 V level-shifting action of the p-ch DAD has been confirmed by a circuit experiment
Keywords
MOS integrated circuits; electric breakdown; power integrated circuits; power semiconductor devices; silicon-on-insulator; 600 V; HVIC; HVMOS IC; SOI; device breakdown voltage; high-voltage IC; lateral power device; on-state current; p-channel dual action device; Anodes; Breakdown voltage; Cathodes; Circuits; Electric breakdown; Fabrication; Inverters; Laboratories; Power engineering and energy; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the
Conference_Location
Minneapolis, MN
ISSN
1088-9299
Print_ISBN
0-7803-3916-9
Type
conf
DOI
10.1109/BIPOL.1997.647422
Filename
647422
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