Title :
Formation of complex clusters in Ar/O2 gas cluster beams
Author :
Saito, Masahiro ; Hagiwara, Norihisa ; Toyoda, Noriaki ; Matsuo, Jiro ; Yamada, Isao
Author_Institution :
Ion Beam Eng. Exp. Lab., Kyoto Univ., Japan
Abstract :
Reactive cluster ion beams exhibit high sputtering yields and permit highly selective etching. Also, Ar cluster ion beams exhibit surface smoothing. Using a cluster beam formed from the mixtures of Ar and reactive gas, a high yield sputtering and effective surface smoothing can occur at the same time. In order to understand the cluster-surface interaction, the information on both cluster size distributions and the ratio of Ar/O2 is required. In this study, O2 cluster beams were formed with Ar gas mixture, and the cluster size distributions were measured by a time of flight (TOF) mass analyzer
Keywords :
argon; atom-surface impact; atomic clusters; molecular clusters; molecule-surface impact; oxygen; sputter etching; time of flight mass spectra; Ar-O2; Ar/O2 gas cluster beams; TOF mass analyzer; cluster size distributions; cluster-surface interaction; complex clusters formation; high sputtering yields; highly selective etching; reactive cluster ion beams; surface smoothing; time of flight mass analyzer; Argon; Atomic measurements; Chemicals; Ion beams; Rough surfaces; Size measurement; Smoothing methods; Sputter etching; Sputtering; Surface roughness;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1998.813908
