A mathematical model of ground-noise for short-channel transistors

Author

Feferko, M. ; John, W. ; Reichl, H. ; De Smedt, R. ; Vervoort, K.

Author_Institution

Fraunhofer Inst. Reliability & Microintegration, Paderborn, Germany

Volume

2

fYear

2001

fDate

2001

Firstpage

1179

Abstract

In this contribution a mathematical model of ground-noise is presented. The model describes a whole noise signal. The ground-noise signal has been split into three phases which are analyzed separately. For the calculation of the maximal value of noise in the first phase the method of closed equations has been used. The second phase of noise has been modelled with a serial RL-circuit. The last phase of ground-noise has been analyzed as an oscillating circuit. The agreement between calculation and simulation results for full circuit with HSPICE is very good. The main advantage of the presented model is the fact that it can be used for high-level simulations where complex circuits can be replaced with equivalent voltage sources for the circuit function and the noise effect. Using this kind of simulation method gives very good results and also allows analysis of complicated circuits

Keywords

SPICE; circuit oscillations; electromagnetic interference; semiconductor device models; transistors; HSPICE; circuit function; closed equations; equivalent voltage sources; ground-noise signal; high-level simulations; mathematical model; noise effect; oscillating circuit; serial RL circuit; simulation method; Analytical models; Circuit analysis; Circuit noise; Circuit simulation; Equations; Inductance; Mathematical model; Phase noise; Signal analysis; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electromagnetic Compatibility, 2001. EMC. 2001 IEEE International Symposium on

Conference_Location

Montreal, Que.

Print_ISBN

0-7803-6569-0

Type

conf

DOI

10.1109/ISEMC.2001.950596

Filename

950596