Molecular dynamics study of implant and damage formation in low-energy boron cluster ion implantation

Cluster ion implantation using decaborane (B₁₀H₁₄ ) has been proposed as a useful technique for shallow junction formation. In order to examine the characteristics and advantages of cluster ion implantation, molecular dynamics simulations of small B cluster and monomer implantation were performed B₁, B₄ and B₁₀ are irradiated on Si(001) substrates with acceleration energy of 230 eV/atom so that B₄ and B₁₀ are accelerated with 0.92 keV and 2.3 keV, respectively. Those three show the same implant profile and implant efficiency, which agrees with the experimental result of B₁₀H₁₄ implantation. This result suggests that each B atom in a B cluster acts individually in similar way to a monomer ion