STM observations of the annealing process of the damage caused by ion impact

Author

Seki, Toshio ; Matsuo, Jiro ; Yamada, Isao

Author_Institution

Ion Beam Eng. Exp. Lab., Kyoto Univ., Japan

Volume

2

fYear

1999

fDate

36495

Firstpage

1262

Abstract

In order to reveal the annealing process and understand the influence of ion impacts on film formation, we have been developing an ion beam system combined with a variable temperature scanning tunneling microscope in ultra high vacuum (UHV-VT-STM). This system allows us to study the annealing process of the damage caused by ion impact. A Si(111) surface irradiated by Xe ions, with Va=1 kV and dose=6.4×10¹² ions/cm² was observed by UHV-VT-STM. Before irradiation, the 7×7 reconstructed surface was observed clearly at room temperature, but the disordered image was obtained after irradiation. When it was observed by UHV-VT-STM at 600°C, some fragments of the 7×7 structure and large vacancy islands were found on the surface. By subsequent annealing at 700°C, it was recovered completely, and the 7×7 reconstructed surface was observed clearly

Keywords

annealing; elemental semiconductors; ion-surface impact; island structure; scanning tunnelling microscopy; silicon; surface reconstruction; vacancies (crystal); xenon; 1 kV; 600 C; 700 C; STM observations; Si; Si(111) surface; Xe; annealing process; film formation; ion impact damage; reconstructed surface; room temperature; vacancy islands; variable temperature scanning tunneling microscopy; Annealing; Atomic layer deposition; Electrons; Image reconstruction; Ion beams; Microscopy; Surface reconstruction; Temperature; Tunneling; Vacuum systems;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology Proceedings, 1998 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-7803-4538-X

Type

conf

DOI

10.1109/IIT.1998.813921

Filename

813921