Title :
STM observations of the annealing process of the damage caused by ion impact
Author :
Seki, Toshio ; Matsuo, Jiro ; Yamada, Isao
Author_Institution :
Ion Beam Eng. Exp. Lab., Kyoto Univ., Japan
Abstract :
In order to reveal the annealing process and understand the influence of ion impacts on film formation, we have been developing an ion beam system combined with a variable temperature scanning tunneling microscope in ultra high vacuum (UHV-VT-STM). This system allows us to study the annealing process of the damage caused by ion impact. A Si(111) surface irradiated by Xe ions, with Va=1 kV and dose=6.4×1012 ions/cm2 was observed by UHV-VT-STM. Before irradiation, the 7×7 reconstructed surface was observed clearly at room temperature, but the disordered image was obtained after irradiation. When it was observed by UHV-VT-STM at 600°C, some fragments of the 7×7 structure and large vacancy islands were found on the surface. By subsequent annealing at 700°C, it was recovered completely, and the 7×7 reconstructed surface was observed clearly
Keywords :
annealing; elemental semiconductors; ion-surface impact; island structure; scanning tunnelling microscopy; silicon; surface reconstruction; vacancies (crystal); xenon; 1 kV; 600 C; 700 C; STM observations; Si; Si(111) surface; Xe; annealing process; film formation; ion impact damage; reconstructed surface; room temperature; vacancy islands; variable temperature scanning tunneling microscopy; Annealing; Atomic layer deposition; Electrons; Image reconstruction; Ion beams; Microscopy; Surface reconstruction; Temperature; Tunneling; Vacuum systems;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1998.813921
