Title :
A low on-resistance 60 V MOSFET high side switch and a 30 V npn transistor based on 5 V BiCMOS process
Author :
Kawaguchi, Yusuke ; Kinoshita, Kozo ; Nakagawa, Akio
Author_Institution :
Adv. Res. Lab., Toshiba Corp., Kawasaki, Japan
Abstract :
This paper present a 60 V MOSFET and a 30 V npn transistor based on a 5 V BiCMOS process. The proposed MOSFET on n-epi/n+ buried layer can be operated as high side switch, and can be fabricated with a 30 V npn. The predicted specific on-resistance of this MOSFET is as low as 105 mΩ·μm2. These device structures are suitable for fabrication by conventional BiCMOS process
Keywords :
BiCMOS integrated circuits; field effect transistor switches; power MOSFET; power bipolar transistors; power integrated circuits; 30 V; 5 V; 60 V; BiCMOS process; MOSFET high side switch; NPN transistor; n-epi/n+ buried layer; on-resistance; Automotive engineering; BiCMOS integrated circuits; Breakdown voltage; Fabrication; Laboratories; MOSFET circuits; Power MOSFET; Semiconductor devices; Substrates; Switches; Transistors;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-3916-9
DOI :
10.1109/BIPOL.1997.647423
