DocumentCode :
3495746
Title :
Simple through silicon interconnect via fabrication using dry filling of sub-micron Au particles for 3D MEMS
Author :
Shih, Kailing ; Nimura, Masatsugu ; Kanehira, Yukio ; Ogashiwa, Toshinori ; Mizuno, Jun ; Shoji, Shuji
Author_Institution :
Waseda Univ., Tokyo, Japan
fYear :
2013
fDate :
20-24 Jan. 2013
Firstpage :
299
Lastpage :
302
Abstract :
We developed a novel through silicon via (TSV) fabrication process using dry filling of sub-micron Au particle for stack type 3D MEMS. X-ray image shows that the slurry including Au particles was uniformly filled into vias with squeegee under low pressure in short time. TSV with a diameter of 30 μm and depth of 70μm were successfully fabricated. The resistance of single TSV was 0.11 Ω. The dielectric withstanding voltage of SiO2 insulating layer was about 150 V. The result indicates that high through put fabrication of TSV for 3D MEMS can be realized with a simple method.
Keywords :
gold; microfabrication; micromechanical devices; three-dimensional integrated circuits; Au; TSV fabrication process; X-ray image; dielectric withstanding voltage; dry filling; insulating layer; resistance 0.11 ohm; size 30 mum; size 70 mum; slurry; stack-type 3D MEMS; submicron gold particles; through silicon interconnect via fabrication; throughput fabrication; Fabrication; Filling; Gold; Micromechanical devices; Silicon; Substrates; Through-silicon vias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2013 IEEE 26th International Conference on
Conference_Location :
Taipei
ISSN :
1084-6999
Print_ISBN :
978-1-4673-5654-1
Type :
conf
DOI :
10.1109/MEMSYS.2013.6474237
Filename :
6474237
Link To Document :
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