DocumentCode :
3495796
Title :
A 0.7 μm linear BiCMOS/DMOS technology for mixed-signal/power applications
Author :
Smith, Jeffrey ; Tessmer, Alison ; Springer, Lily ; Madhani, Praful ; Erdeljac, John ; Mitros, Jozef ; Efland, Taylor ; Tsai, Chin-Yu ; Pendharkar, Sameer ; Hutter, Louis
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
fYear :
1997
fDate :
28-30 Sep 1997
Firstpage :
155
Lastpage :
157
Abstract :
A 0.7 μm BiCMOS technology is described. The baseline process offers digital and analog CMOS, a variety of bipolar devices, poly resistors, poly-poly capacitors, Schottky diodes, noise isolation, and 3 levels of metal. Power DMOS transistors with 60 V (Rsp=0.90 mΩ·cm2) down to 16 V (Rsp=0.34 mΩ·cm2) performance are available as an option in the process
Keywords :
BiCMOS integrated circuits; integrated circuit noise; integrated circuit technology; mixed analogue-digital integrated circuits; power integrated circuits; 0.7 micron; 16 to 60 V; Schottky diodes; analog CMOS; bipolar devices; digital CMOS; linear BiCMOS/DMOS technology; mixed-signal/power applications; noise isolation; poly resistors; poly-poly capacitors; power DMOS transistors; BiCMOS integrated circuits; CMOS process; CMOS technology; Capacitors; Costs; Isolation technology; Logic; MOS devices; Noise level; Printers; Resistors; Schottky diodes; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the
Conference_Location :
Minneapolis, MN
ISSN :
1088-9299
Print_ISBN :
0-7803-3916-9
Type :
conf
DOI :
10.1109/BIPOL.1997.647424
Filename :
647424
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3495796
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