• DocumentCode
    3496067
  • Title

    Fabrication of silica nanowire bunch arrays in SiO vapor generated by oxygen plasma etching of silicon

  • Author

    She, D.D. ; Zhao, L.R. ; Li, Cong ; Zhang, F.Q. ; Cai, G.B. ; Wu, W.G.

  • Author_Institution
    Nat. Key Lab. of Sci. & Technol. on Micro/Nano Fabrication, Peking Univ., Beijing, China
  • fYear
    2013
  • fDate
    20-24 Jan. 2013
  • Firstpage
    351
  • Lastpage
    354
  • Abstract
    This paper reports a three-step fabrication method for highly ordered silica nanowire bunch arrays of diversiform shapes. After patterning of organic polymers on Si substrates through photo lithography, oxygen plasma bombardment is applied to fabricate nanowire bunch arrays. On one hand, oxygen plasma exploits Si source from the substrates, and, subsequently, the gaseous Si react with active oxygen to form SiO vapor. On the other hand, oxygen plasma erodes the polymer patterns and, simultaneously, make them electrostatically attract the SiO material to form straight silica nanowire bunches. Based on this approach, standing nanowire bunch arrays of different sizes and different shapes are achieved on selective areas or structures. The nanowire bunches are able to bend toward a gallium focused-ion-beam irradiation, from different positions, in different directions and at different angles.
  • Keywords
    elemental semiconductors; nanofabrication; nanowires; photolithography; silicon; silicon compounds; sputter etching; Si; SiO; active oxygen; diversiform shapes; gallium focused-ion-beam irradiation; gaseous silicon; organic polymer patterning; oxygen plasma bombardment; oxygen plasma etching; photolithography; silica nanowire bunch array fabrication; silicon oxide vapor; silicon substrates; Fabrication; Nanobioscience; Plasmas; Resists; Silicon; Silicon compounds; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2013 IEEE 26th International Conference on
  • Conference_Location
    Taipei
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4673-5654-1
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2013.6474250
  • Filename
    6474250