Title :
Numerical noise model for the AlGaN/GaN HEMT
Author :
Lee, Sungjae ; Webb, Kevin J.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., USA
Abstract :
A numerical approach to simulate the intrinsic noise sources within transistors is described. Using a 2D numerical device solver, spectral densities for the gate and drain noise current sources and their correlation are evaluated using a Green´s function approach, an equivalent of Shockley´s impedance field method. Case studies with AlGaN/GaN HEMTs compare the numerical simulation results to those from measurements, showing good agreement.
Keywords :
Green´s function methods; III-V semiconductors; aluminium compounds; electric impedance; gallium compounds; high electron mobility transistors; semiconductor device models; semiconductor device noise; wide band gap semiconductors; 2D numerical device solver; AlGaN-GaN; AlGaN-GaN HEMT; Green´s function approach; Shockley´s impedance field method; drain noise current sources; gate sources; intrinsic noise sources; numerical noise model; numerical simulation; spectral densities; Aluminum gallium nitride; Circuit noise; Fluctuations; Gallium nitride; HEMTs; Impedance; Noise cancellation; Noise figure; Numerical models; Voltage;
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
Print_ISBN :
0-7803-8331-1
DOI :
10.1109/MWSYM.2004.1339166
