DocumentCode
3496086
Title
A new precise large signal LDMOS(T) model including time delay effects
Author
Follmann, R. ; Stahlmann, R. ; Köther, D. ; Lauer, A. ; Wolff, I. ; Gajadharsing, J. ; Versleijen, M. ; Sveshtarov, J.
Author_Institution
IMST GmbH, Kamp-Lintfort, Germany
Volume
2
fYear
2004
fDate
6-11 June 2004
Firstpage
1061
Abstract
In this paper we present a new precise LDMOS(T) model. The model includes constant as well as bias dependent time delay effects. Furthermore, we demonstrate some new model extraction methods, which allow precise delay time calculations. The model has been implemented into Agilents´ ADS software. We show compression and intermodulation simulations in excellent comparison with measurements.
Keywords
MOSFET; S-parameters; delay circuits; equivalent circuits; intermodulation; semiconductor device models; smoothing circuits; Agilents ADS software; bias dependent time delay effects; delay time calculations; equivalent circuit; intermodulation simulations; large signal LDMOS transistor model; scattering parameter; smoothing; Base stations; Capacitance; Delay effects; Electronic mail; Equivalent circuits; Frequency; Heating; Operational amplifiers; Power measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2004 IEEE MTT-S International
ISSN
0149-645X
Print_ISBN
0-7803-8331-1
Type
conf
DOI
10.1109/MWSYM.2004.1339167
Filename
1339167
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