Title :
A new precise large signal LDMOS(T) model including time delay effects
Author :
Follmann, R. ; Stahlmann, R. ; Köther, D. ; Lauer, A. ; Wolff, I. ; Gajadharsing, J. ; Versleijen, M. ; Sveshtarov, J.
Author_Institution :
IMST GmbH, Kamp-Lintfort, Germany
Abstract :
In this paper we present a new precise LDMOS(T) model. The model includes constant as well as bias dependent time delay effects. Furthermore, we demonstrate some new model extraction methods, which allow precise delay time calculations. The model has been implemented into Agilents´ ADS software. We show compression and intermodulation simulations in excellent comparison with measurements.
Keywords :
MOSFET; S-parameters; delay circuits; equivalent circuits; intermodulation; semiconductor device models; smoothing circuits; Agilents ADS software; bias dependent time delay effects; delay time calculations; equivalent circuit; intermodulation simulations; large signal LDMOS transistor model; scattering parameter; smoothing; Base stations; Capacitance; Delay effects; Electronic mail; Equivalent circuits; Frequency; Heating; Operational amplifiers; Power measurement; Voltage;
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
Print_ISBN :
0-7803-8331-1
DOI :
10.1109/MWSYM.2004.1339167
