28 V high-power GaAs FET large-signal modeling achieves power and linearity prediction

This paper presents a large-signal model developed for a packaged 28 V GaAs FET power device, suitable for high-power Base Station Applications. The model is capable of predicting external load and source impedances that enable the device to provide desired power and linearity (IM3 and IM5) performance. It also takes into account the device temperature difference between the unit-cell transistor and the whole multi-cell device. Therefore, design cycle of high power PA modules are shortened and so is the development of internally matched devices for other frequencies. The paper shows an application example for a P_1dB of 80 W.