Drie of fused silica

Author

Zongliang Cao ; VanDerElzen, B. ; Owen, K.J. ; Jialiang Yan ; Guohong He ; Peterson, Rebecca L. ; Grimard, D. ; Najafi, Khalil

Author_Institution

Center for Wireless Integrated Micro Sensing & Syst. (WIMS), Univ. of Michigan, Ann Arbor, MI, USA

fYear

2013

fDate

20-24 Jan. 2013

Firstpage

361

Lastpage

364

Abstract

This paper reports detailed characterization results of deep reactive ion etching of fused silica with three different masking materials: single-crystal Si, negative photoresist KMPR and SU-8. With an optimized etch recipe, KMPR and SU-8 show higher effective mask selectivity, are easier to integrate and remove than Si, making them better masks for creating high-aspect ratio features. Using a KMPR mask, a high aspect ratio (8:1) etch with a 6-μm mask opening is obtained. SU-8 masks also achieve high aspect ratios of 4.5:1 for 20-μm wide trenches, with mask selectivity of ~2:1. However the polymeric masks cause greater FS sidewall roughness.

Keywords

masks; photoresists; silicon; silicon compounds; sputter etching; DRIE; SU-8 mask; SiO₂; deep reactive ion etching; fused silica; high-aspect ratio features; mask selectivity; masking materials; negative photoresist KMPR mask; polymeric masks; single-crystal siluicon mask; size 20 mum; size 6 mum; Etching; Glass; Helium; Resists; Silicon; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems (MEMS), 2013 IEEE 26th International Conference on

Conference_Location

Taipei

ISSN

1084-6999

Print_ISBN

978-1-4673-5654-1

Type

conf

DOI

10.1109/MEMSYS.2013.6474253

Filename

6474253