InGaP/GaAs HBT I/V characterization for Volterra series analysis

Author

Huang, Chien-Chang ; Chen, Kuan-Yu

Author_Institution

Dept. of Commun. Eng., Yuan Ze Univ., Taoyuan, Taiwan

Volume

2

fYear

2004

fDate

6-11 June 2004

Firstpage

1073

Abstract

In this paper, the base/collector current characteristics of InGaP/GaAs heterojunction bipolar transistors (HBT´s) for Volterra analysis are extracted by using the low-frequency harmonic power measurements with the associated phase polarity information. The determining equations are derived in a systematic approach to acquire the general expressions to any nonlinear orders. Simulations and experiments of two-tone intermodulation distortions for a HBT device verify the extracted results.

Keywords

III-V semiconductors; Volterra series; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; intermodulation distortion; semiconductor device models; HBT device; I-V characterization; InGaP-GaAs; InGaP-GaAs heterojunction bipolar transistors; Volterra series analysis; base-collector current characteristics; low frequency harmonic power measurements; nonlinear coefficients; phase polarity; two tone intermodulation distortions; Data mining; Gallium arsenide; Genetic expression; Harmonic analysis; Heterojunction bipolar transistors; Information analysis; Intermodulation distortion; Nonlinear equations; Power measurement; Power system harmonics;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1339170

Filename

1339170