• DocumentCode
    3496287
  • Title

    Irreversible deformation of microns thick single crystal silicon in a temperature range of 350–500°C

  • Author

    Sato, Kiminori ; Sugimoto, Akihiro ; Nishimura, T.

  • Author_Institution
    Nagoya Univ., Nagoya, Japan
  • fYear
    2013
  • fDate
    20-24 Jan. 2013
  • Firstpage
    385
  • Lastpage
    388
  • Abstract
    Single crystal silicon (SCS) beam showed plastic deformation in a temperature range of 350-500°C, when it was in a size of 2-μm thick. SCS beams made from a top layer of SOI wafer were first elastically buckled by compressive force applied from free end of the beam in a longitudinal direction. Then the beams were kept at an elevated constant temperature for 1 hour in air. After releasing the applied force at room temperature, residual bent profile was evaluated using a laser profiler. Plastic hinge, i.e. localized plastic deformation, was observed for beams bent at 350-500°C but not at 300°C. We further demonstrated that a permanently deformed out-of-plane microstructure was obtained by applying hot air flow to a SCS planer film.
  • Keywords
    buckling; elemental semiconductors; micromechanical devices; plastic deformation; silicon; silicon-on-insulator; SCS beam; SCS planer film; SOI wafer; Si; compressive force; elastic buckling; hot air flow; irreversible micron deformation; laser profiler; localized plastic deformation; out-of-plane microstructure; plastic hinge; residual bent profile; size 2 mum; temperature 350 degC to 500 degC; thick-single-crystal silicon; Heating; Plastics; Silicon; Spirals; Strain; Structural beams; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2013 IEEE 26th International Conference on
  • Conference_Location
    Taipei
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4673-5654-1
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2013.6474259
  • Filename
    6474259