• DocumentCode
    3496373
  • Title

    The role of dissolved gas in longevity of Cassie states for immersed superhydrophobic surfaces

  • Author

    Wei-Yang Sun ; Kim, Chang-Jin C. J.

  • Author_Institution
    Mech. & Aerosp. Eng. Dept., Univ. of California, Los Angeles, Los Angeles, CA, USA
  • fYear
    2013
  • fDate
    20-24 Jan. 2013
  • Firstpage
    397
  • Lastpage
    400
  • Abstract
    We report on the longevity of dewetted (Cassie) states on submerged superhydrophobic (SHPo) surfaces in relation to dissolved ambient gases in the water. The report uniquely verifies that trapped gas on a submerged SHPo surface is lost faster, i.e., the surface becomes wetted faster, if the surrounding water contains less dissolved gas. This study improves on previous SHPo characterization methods by processing time-lapse images to calculate wetted surface fractions. Teflon®-coated SHPo grating samples with parallel ridges 10 μm in width, 50 μm in pitch (i.e., 80% gas fraction), and 50 μm in depth are submersed vertically 10 cm deep in gas-concentration-controlled DI water. SHPo surfaces immersed in degassed water wetted more rapidly than in equilibrated or supersaturated water, and all surfaces failed within a finite time period indicating the challenges of underwater SHPo applications.
  • Keywords
    dissolving; hydrophobicity; water; wetting; H2O; Teflon-coated SHPo grating; ambient gas dissolving; cassie state longevity; degassed water; dewetted state longevity; gas-concentration-controlled DI water; immersed superhydrophobic surfaces; parallel ridges; size 10 mum; size 50 mum; submerged SHPo surface; supersaturated water; surrounding water; time-lapse images; trapped gas; underwater SHPo applications; wetted surface fractions; Gases; Gratings; Liquids; Rough surfaces; Silicon; Surface roughness; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2013 IEEE 26th International Conference on
  • Conference_Location
    Taipei
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4673-5654-1
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2013.6474262
  • Filename
    6474262