DocumentCode :
3496409
Title :
Comparative study of the switching energy losses between Si PiN and SiC Schottky diode
Author :
Yahaya, Nor Zaihar ; Chew, Khoo Choon
Author_Institution :
Universiti Teknologi Petronas, Malaysia
fYear :
2004
fDate :
29-30 Nov. 2004
Firstpage :
216
Lastpage :
219
Abstract :
paper is to compare the switching energy losses of the silicon carbide Schottky diode with the silicon PiN diode. The comparison is done using an inductive load chopper circuit simulated with Pspice, a type of circuit analysis software. Both diode models used for the simulation are from Infineon; the silicon carbide Schottky (SDP04S60, 4 A/600 V) and silicon PiN (IDP06E60, 6 A/600 V).
Keywords :
Schottky diodes; choppers (circuits); circuit analysis computing; p-i-n diodes; wide band gap semiconductors; 4 A; 6 A; 600 V; IDP06E60; Pspice; SDP04S60; Si PiN diode; SiC Schottky diode; circuit analysis software; inductive load chopper circuit; silicon PiN diode; silicon carbide Schottky diode; switching energy losses; Circuit simulation; Energy loss; Forward contracts; Schottky diodes; Semiconductor diodes; Silicon carbide; Stress; Switching loss; Temperature; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power and Energy Conference, 2004. PECon 2004. Proceedings. National
Print_ISBN :
0-7803-8724-4
Type :
conf
DOI :
10.1109/PECON.2004.1461646
Filename :
1461646
Link To Document :
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