DocumentCode
3496409
Title
Comparative study of the switching energy losses between Si PiN and SiC Schottky diode
Author
Yahaya, Nor Zaihar ; Chew, Khoo Choon
Author_Institution
Universiti Teknologi Petronas, Malaysia
fYear
2004
fDate
29-30 Nov. 2004
Firstpage
216
Lastpage
219
Abstract
paper is to compare the switching energy losses of the silicon carbide Schottky diode with the silicon PiN diode. The comparison is done using an inductive load chopper circuit simulated with Pspice, a type of circuit analysis software. Both diode models used for the simulation are from Infineon; the silicon carbide Schottky (SDP04S60, 4 A/600 V) and silicon PiN (IDP06E60, 6 A/600 V).
Keywords
Schottky diodes; choppers (circuits); circuit analysis computing; p-i-n diodes; wide band gap semiconductors; 4 A; 6 A; 600 V; IDP06E60; Pspice; SDP04S60; Si PiN diode; SiC Schottky diode; circuit analysis software; inductive load chopper circuit; silicon PiN diode; silicon carbide Schottky diode; switching energy losses; Circuit simulation; Energy loss; Forward contracts; Schottky diodes; Semiconductor diodes; Silicon carbide; Stress; Switching loss; Temperature; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Power and Energy Conference, 2004. PECon 2004. Proceedings. National
Print_ISBN
0-7803-8724-4
Type
conf
DOI
10.1109/PECON.2004.1461646
Filename
1461646
Link To Document