Novel T/R switch architectures for MIMO applications

In this paper, we present new architectures for three kinds of RF switches (DPDT, DP4T, 4P4T) with very simple control logics and high power handling capabilities. Implementation of DPDT, DP4T, and 4P4T switch matrix for multi-input-multi-output (MIMO) applications is demonstrated with measurements. The suggested DPDT, DP4T, and 4P4T switch architectures require only one, two and three control lines, respectively, regardless of semiconductor technology. The developed DPDT switch demonstrates 1.0 dB of insertion loss, 19 dB of isolation, and 31 dBm of input P0.1 dB, 34.5 dBm of input P1 dB in 3/0 V operation at 5.8 GHz. The DP4T, 4P4T switches exhibit 1.8 dB, 2.8 dB of insertion loss, and 23/37 dB, 20/35/55 dB of isolation, respectively, and 31 dBm of input P0.1 dB, 35 dBm of input P1 dB in 3/0 V operation at 5.8 GHz. The MMICs are developed in a commercial 0.25-μm GaAs pHEMT process. These switch architectures are preferable for the Si-based processes because the substrate vias are not required due to their generic topologies. To the best of our knowledge, this is the first report on the simple architectures for RF switch matrix for MIMO applications.