Title :
Simulation of InGaN/GaN light-emitting diodes with a non-local quantum well transport model
Author :
Xia, Chang Sheng ; Li, Z. M Simon ; Sheng, Yang ; Cheng, Li Wen ; Hu, Wei Da ; Lu, Wei
Author_Institution :
Crosslight Software Inc. China Branch, Shanghai, China
Abstract :
Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) are simulated by the APSYS software with a non-local quantum well transport model. The simulation results are in good agreement with experiment and indicate the non-local quantum well transport model has a significant influence on the radiative recombination, the carrier transport and the current crowding of the InGaN/GaN MQW LEDs.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; semiconductor quantum wells; wide band gap semiconductors; APSYS software; InGaN-GaN; carrier transport; light emitting diodes; nonlocal quantum well transport model; radiative recombination; Gallium nitride; Light emitting diodes; Mathematical model; Proximity effects; Quantum well devices; Radiative recombination; Software;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4673-1602-6
DOI :
10.1109/NUSOD.2012.6316487
