Title :
pHEMT and mHEMT ultra wideband millimeterwave balanced resistive mixers
Author :
Gunnarsson, Sten ; Yhland, Klas ; Zirath, Herbert
Author_Institution :
Dept. of Microelectron., Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
Two ultra wideband millimeterwave single balanced resistive mixers utilizing a Marchand balun for the LO-hybrid are simulated, fabricated and characterized for 30-60 GHz in both up and down conversion. Two different versions of the mixer were manufactured in a commercial pHEMT-MMIC and a mHEMT-MMIC process respectively. A measured down conversion loss of approximately 6 to 12 dB over the whole band is obtained for both versions of the mixer with external IF power combining. In spite of the balanced design, the required LO power is quite low, 2 dBm is sufficient for low conversion loss. The LO-RF isolation is excellent, often more than 30 dB for both type of mixers. Low noise figure and high IIP3 figures are obtained. It is also shown that by applying selective drain bias, up to 5 dB improvement of IIP3 can be obtained for the mHEMT mixer with small LO powers.
Keywords :
MMIC mixers; MMIC oscillators; baluns; broadband networks; high electron mobility transistors; integrated circuit design; integrated circuit noise; millimetre wave mixers; millimetre wave power transistors; semiconductor device noise; 30 to 60 GHz; 6 to 12 dB; IF power; Marchand balun; conversion loss; local oscillator power; local oscillator-RF isolation; mHEMT ultra wideband millimeterwave balanced resistive mixers; mHEMT-MMIC process; noise figure; pHEMT ultra wideband millimeterwave balanced resistive mixers; pHEMT-MMIMMIC process; Bandwidth; Circuit simulation; Foundries; Impedance matching; Manufacturing processes; Microelectronics; Mixers; PHEMTs; Ultra wideband technology; mHEMTs;
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
Print_ISBN :
0-7803-8331-1
DOI :
10.1109/MWSYM.2004.1339187