Electro-optical characteristics for AlGaN solar-blind p-i-n photodiode: Experiment and simulation

Author

Wang, X.D. ; Hu, W.D. ; Chen, X.S. ; Xu, J.T. ; Wang, L. ; Li, X.Y. ; Lu, W.

Author_Institution

Nat. Lab. for Infrared Phys., Shanghai Inst. of Tech. Phys., Shanghai, China

fYear

2012

fDate

28-31 Aug. 2012

Firstpage

33

Lastpage

34

Abstract

The fabrication and modeling for solar-blind AlGaN-based p-i-n photodiode have been presented. The simulated dark current characteristics are in good agreement with the experiments. It is found that the peak responsivity of 0.005A/W can be achieved at 265nm corresponding to the cutoff wavelength of the Al_0.45Ga_0.55N absorption layer. The transmission spectra drop to nearly zero due to the intense light absorption of n-type Al_0.65Ga_0.35N layer.

Keywords

III-V semiconductors; aluminium compounds; dark conductivity; electro-optical effects; gallium compounds; light absorption; p-i-n photodiodes; wide band gap semiconductors; AlGaN; absorption layer; dark current characteristics; electrooptical characteristics; light absorption; peak responsivity; solar-blind p-i-n photodiode; transmission spectra; wavelength 265 nm; Absorption; Aluminum gallium nitride; Dark current; Detectors; PIN photodiodes; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on

Conference_Location

Shanghai

ISSN

2158-3234

Print_ISBN

978-1-4673-1602-6

Type

conf

DOI

10.1109/NUSOD.2012.6316493

Filename

6316493