Title :
Low power and small sized Ku-band MMIC low noise block downconverter design using InGaP/GaAs HBT process
Author :
Jeiyoung Lee ; Sanghun Lee ; Lee, J.C. ; Kim, J.H. ; Lee, B. ; Jeon, S.H. ; Park, J.W. ; Kim, N.Y.
Author_Institution :
RFIC Center, Kwangwoon Univ., Seoul, South Korea
Abstract :
In this paper, low noise block downconverter (LNB) is designed for Ku-band satellite communication system using commercially available 6 inch InGaP/GaAs HBT high linear process. Designed MMIC is composed of low noise amplifier, double balance mixer, and IF amplifier with a total chip area of 2.6×1.1 mm2. Designed MMIC yields conversion gain of over 37.5 dB, noise figure of less than 14 dB, ripple of 3 dB, and output-referred P1dB(1 dB compression power) of 2.5 dBm with total power dissipation of 3 V, 50 mA.
Keywords :
III-V semiconductors; MMIC frequency convertors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; integrated circuit design; integrated circuit noise; intermediate-frequency amplifiers; power integrated circuits; satellite communication; semiconductor device models; 14 dB; 3 V; 37.5 dB; 50 mA; 6 inch; IF amplifier; InGaP-GaAs; InGaP-GaAs HBT; Ku-band satellite communication system; LNB design; MMIC; double balance mixer; heterojunction bipolar transistors; intermediate-frequency amplifier; low noise amplifier; low noise block downconverter design; monolithic microwave integrated circuit; noise figure; power dissipation; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Low-noise amplifiers; MMICs; Metal-insulator structures; Mixers; Process design; Receiving antennas; Satellite broadcasting;
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
Print_ISBN :
0-7803-8331-1
DOI :
10.1109/MWSYM.2004.1339196
