Title :
Experimental determination of minority carrier lifetime and recombination mechanisms in MCT photovoltaic detectors
Author :
Cui, Haoyang ; Tang, Naiyun ; Tang, Zhong
Author_Institution :
Sch. of Comput. & Inf. Eng., Shanghai Univ. of Electr. Power, Shanghai, China
Abstract :
This paper presents an experimental study of minority carrier lifetime and recombination mechanisms in HgCdTe photodiode. The excitation light source is a wavelength-tunable pulsed infrared laser. A constant background illumination has been introduced to minimize the effect of the junction equivalent capacitor and the equivalent series resistance. The slow decay of the photo-generated voltage is recorded by a storage oscilloscope. By fitting the exponentially decay curve, the time constant has been obtained which is regarded as the photo-generated minority carrier lifetime of the HgCdTe photodiode. The experimental results show that the carrier lifetime is in the range of 18 ~ 407 ns at 77 K for the measured detectors of four compositions. It was found that the Auger recombination process is more effective for low Cd composition while the radiative recombination process became more important for high compensated materials. The Shockley-Read-Hall (SRH) recombination processes could not be ignored for all Cd composition.
Keywords :
II-VI semiconductors; carrier lifetime; electron-hole recombination; mercury compounds; photodetectors; photodiodes; HgCdTe; MCT photovoltaic detectors; Shockley-Read-Hall recombination processes; background illumination; decay curve; equivalent series resistance; excitation light source; junction equivalent capacitor; photodiode; photogenerated minority carrier lifetime; photogenerated voltage; recombination mechanisms; storage oscilloscope; time constant; wavelength tunable pulsed infrared laser; Charge carrier lifetime; Detectors; Junctions; Photovoltaic systems; Radiative recombination; Semiconductor device measurement; Cd composition; HgCdTe; minority carrier lifetime; open circuit photvoltage;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4673-1602-6
DOI :
10.1109/NUSOD.2012.6316496