Title :
Optimization of InSb infrared focal plane arrays
Author :
Guo, Nan ; Hu, Wei-Da ; Chen, Xiao-Shuang ; Lv, Yan-Qiu ; Zhang, Xiao-Lei ; Si, Jun-Jie ; Lu, Wei
Author_Institution :
Nat. Lab. for Infrared Phys., Shanghai Inst. of Tech. Phys., Shanghai, China
Abstract :
The quantum efficiency (QE) for mid-wavelength InSb infrared focal plane arrays has been numerically studied. Effects of the absorption length and thickness of p-region on device QE have been investigated. Our work shows that the optimum thickness of p-region is largely dependent on the absorption characteristics of the InSb.
Keywords :
III-V semiconductors; focal planes; indium compounds; infrared detectors; light absorption; InSb; absorption length; infrared focal plane arrays; optimum thickness; p-region; quantum efficiency; Absorption; Detectors; Fitting; Mathematical model; Numerical models; Optical detectors; Physics;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4673-1602-6
DOI :
10.1109/NUSOD.2012.6316499
