DocumentCode
3496748
Title
Optimization of InSb infrared focal plane arrays
Author
Guo, Nan ; Hu, Wei-Da ; Chen, Xiao-Shuang ; Lv, Yan-Qiu ; Zhang, Xiao-Lei ; Si, Jun-Jie ; Lu, Wei
Author_Institution
Nat. Lab. for Infrared Phys., Shanghai Inst. of Tech. Phys., Shanghai, China
fYear
2012
fDate
28-31 Aug. 2012
Firstpage
45
Lastpage
46
Abstract
The quantum efficiency (QE) for mid-wavelength InSb infrared focal plane arrays has been numerically studied. Effects of the absorption length and thickness of p-region on device QE have been investigated. Our work shows that the optimum thickness of p-region is largely dependent on the absorption characteristics of the InSb.
Keywords
III-V semiconductors; focal planes; indium compounds; infrared detectors; light absorption; InSb; absorption length; infrared focal plane arrays; optimum thickness; p-region; quantum efficiency; Absorption; Detectors; Fitting; Mathematical model; Numerical models; Optical detectors; Physics;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on
Conference_Location
Shanghai
ISSN
2158-3234
Print_ISBN
978-1-4673-1602-6
Type
conf
DOI
10.1109/NUSOD.2012.6316499
Filename
6316499
Link To Document