Title :
Running wave form extended states in charactering the photocurrent of multiple quantum well and superlattice structured GaAs/AlGaAs solar cells
Author :
Yang, X.F. ; Liu, Y.S. ; Jiang, X.F.
Author_Institution :
Jiangsu Lab. of Adv. Functional Mater. & Coll. of Phys. & Eng., Changshu Inst. of Technol., Changshu, China
Abstract :
The numerical simulations of the contribution of GaAs/AlGaAs multiple quantum well and superlattice to photocurrent in solar cells are presented. Effects of thickness of barrier and period on the extended and localized states, photocurrent have been investigated. Running wave method of calculation on the extended states of the two structures are adopt and compared.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; photoconductivity; quantum wells; solar cells; superlattices; GaAs-AlGaAs; localized state; multiple quantum well; photocurrent; running wave form extended state; superlattice structured solar cells; Charge carrier processes; Periodic structures; Photoconductivity; Photovoltaic cells; Quantum well devices; Superlattices;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4673-1602-6
DOI :
10.1109/NUSOD.2012.6316503
