DocumentCode
3496833
Title
Running wave form extended states in charactering the photocurrent of multiple quantum well and superlattice structured GaAs/AlGaAs solar cells
Author
Yang, X.F. ; Liu, Y.S. ; Jiang, X.F.
Author_Institution
Jiangsu Lab. of Adv. Functional Mater. & Coll. of Phys. & Eng., Changshu Inst. of Technol., Changshu, China
fYear
2012
fDate
28-31 Aug. 2012
Firstpage
53
Lastpage
54
Abstract
The numerical simulations of the contribution of GaAs/AlGaAs multiple quantum well and superlattice to photocurrent in solar cells are presented. Effects of thickness of barrier and period on the extended and localized states, photocurrent have been investigated. Running wave method of calculation on the extended states of the two structures are adopt and compared.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; photoconductivity; quantum wells; solar cells; superlattices; GaAs-AlGaAs; localized state; multiple quantum well; photocurrent; running wave form extended state; superlattice structured solar cells; Charge carrier processes; Periodic structures; Photoconductivity; Photovoltaic cells; Quantum well devices; Superlattices;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on
Conference_Location
Shanghai
ISSN
2158-3234
Print_ISBN
978-1-4673-1602-6
Type
conf
DOI
10.1109/NUSOD.2012.6316503
Filename
6316503
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