DocumentCode :
3496878
Title :
Physical model of an optical memory cell with coupling quantum dots
Author :
Fan, L. ; Guo, F.M.
Author_Institution :
Key Lab. of Polar Mater. & Devices, East China Normal Univ., Shanghai, China
fYear :
2012
fDate :
28-31 Aug. 2012
Firstpage :
57
Lastpage :
58
Abstract :
The physical model was founded by Crosslight Apsys software for new type of photonic memory cell based on a quantum dot (QD)-quantum well (QW) hybrid structure. The physical mechanisms involved such as interband optical transition of quantum dots. The scan conditions and iterative algorithm was also set up to finish solving. Photon storage process has well proved based on I-V curve and transient time response obtained from the model. These are crucial in the signal readout-circuit design afterward.
Keywords :
optical storage; photoconductivity; quantum well devices; semiconductor quantum dots; semiconductor quantum wells; transient response; Crosslight Apsys software; I-V curve; coupling quantum dots; interband optical transition; iterative algorithm; optical memory cell; photon storage process; photonic memory cell; physical mechanisms; physical model; quantum dot-quantum well hybrid structure; scan conditions; signal readout-circuit design; transient time response; Atom optics; Gallium arsenide; Optical buffering; Optical coupling; Optical pulses; Photonics; Quantum dots; APSYS; photon storage; physical model; quantum-dots; quantum-well;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on
Conference_Location :
Shanghai
ISSN :
2158-3234
Print_ISBN :
978-1-4673-1602-6
Type :
conf
DOI :
10.1109/NUSOD.2012.6316505
Filename :
6316505
Link To Document :
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