Title :
A novel active harmonic load-pull setup for on-wafer device linearity characterization
Author :
Spirito, M. ; de Vreede, L.C.N. ; de Kok, M. ; Pelk, M. ; Hartskeerl, D. ; Jos, H.F.F. ; Mueller, J.E. ; Burghartz, J.
Author_Institution :
Lab. of Electron. Components, Technol. & Mater., Technische Univ., Delft, Netherlands
Abstract :
In this paper we present a novel active harmonic load-pull measurement setup devoted to the linearity characterization of on-wafer devices. The proposed setup facilitates independent control of the reflection coefficients at the device under test (DUT) reference planes for the base band (fIF), fundamental (f0), and second-order frequency (f2nd) products. By employing a new concept for the active loads, a small phase variation with frequency of the reflection coefficients at the DUT planes has been achieved. This enables on-wafer device testing with realistic wide-band modulated signals. The applied real-time calibration scheme provides ΓIN, ΓS and ΓL at the DUT for all frequency-mixing products (including base-band). Using the proposed setup, optimum loading conditions for maximum device linearity can be offered on-wafer without any compromise, facilitating a straightforward evaluation of the linearity properties of "new" technology generations.
Keywords :
Ge-Si alloys; calibration; directional couplers; elemental semiconductors; frequency synthesizers; microwave bipolar transistors; power amplifiers; Ge-Si; active harmonic load pull measurement; linearity characterization; on-wafer device; real-time calibration; reflection coefficients; wide band modulated signals; Bandwidth; Calibration; Control systems; Frequency measurement; Laboratories; Linearity; Radio frequency; Reflection; System testing; Wideband;
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
Print_ISBN :
0-7803-8331-1
DOI :
10.1109/MWSYM.2004.1339207