DocumentCode :
3496931
Title :
An equivalent circuit model for the long-wavelength quantum well infrared detectors
Author :
Li, L. ; Weng, Q.C. ; Wen, J. ; Xiong, D.Y.
Author_Institution :
Key Lab. of Polar Mater. & Devices, East China Normal Univ., Shanghai, China
fYear :
2012
fDate :
28-31 Aug. 2012
Firstpage :
63
Lastpage :
64
Abstract :
We present an equivalent circuit model for AlGaAs/GaAs long wavelength quantum well infrared photodetectors (LW-QWIPs). Bias dependence of the dark current and photocurrent is described with the aid of analogue circuit modelling technique in TINA software. This model can be integrated with the readout circuit for the whole device circuit optimization further. The temperature dependence of dark current has also been incorporated into this circuit model. The designed parameters of the LW-QWIPs can be fed into this model as user-defined inputs to simulate the detector performance. The obtained results agree well with the experimental measurements.
Keywords :
equivalent circuits; infrared detectors; photoconductivity; quantum well devices; AlGaAs-GaAs; dark current; device circuit optimization; equivalent circuit; long wavelength quantum well infrared detectors; photocurrent; readout circuit; Dark current; Equations; Equivalent circuits; Integrated circuit modeling; Mathematical model; Photoconductivity; Photodetectors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on
Conference_Location :
Shanghai
ISSN :
2158-3234
Print_ISBN :
978-1-4673-1602-6
Type :
conf
DOI :
10.1109/NUSOD.2012.6316508
Filename :
6316508
Link To Document :
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