Title :
An equivalent circuit model for the long-wavelength quantum well infrared detectors
Author :
Li, L. ; Weng, Q.C. ; Wen, J. ; Xiong, D.Y.
Author_Institution :
Key Lab. of Polar Mater. & Devices, East China Normal Univ., Shanghai, China
Abstract :
We present an equivalent circuit model for AlGaAs/GaAs long wavelength quantum well infrared photodetectors (LW-QWIPs). Bias dependence of the dark current and photocurrent is described with the aid of analogue circuit modelling technique in TINA software. This model can be integrated with the readout circuit for the whole device circuit optimization further. The temperature dependence of dark current has also been incorporated into this circuit model. The designed parameters of the LW-QWIPs can be fed into this model as user-defined inputs to simulate the detector performance. The obtained results agree well with the experimental measurements.
Keywords :
equivalent circuits; infrared detectors; photoconductivity; quantum well devices; AlGaAs-GaAs; dark current; device circuit optimization; equivalent circuit; long wavelength quantum well infrared detectors; photocurrent; readout circuit; Dark current; Equations; Equivalent circuits; Integrated circuit modeling; Mathematical model; Photoconductivity; Photodetectors;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4673-1602-6
DOI :
10.1109/NUSOD.2012.6316508