Crosstalk suppressing design of GaAs microlenses integrated on HgCdTe infrared focal plane arrays

Author

Ye, Zhenhua ; Li, Yang ; Lin, Chun ; Hu, Xiaoning ; Ding, Ruijun ; He, Li

Author_Institution

Key Lab. of Infrared Imaging Mater. & Detectors, Shanghai Inst. of Tech. Phys., Shanghai, China

fYear

2012

fDate

28-31 Aug. 2012

Firstpage

11

Lastpage

12

Abstract

Crosstalk suppressing design of dielectric GaAs microlenses integrated on traditional HgCdTe infrared focal plane arrays (IRFPAs) is presented in this paper, by exploiting the finite difference time domain (FDTD) technique. Responsive photocurrent and crosstalk between most adjacent IR detector pixels have been numerically simulated using Crosslight TCAD commercial software. An optimal curvature of GaAs microlenses has been achieved by maximizing its ability to focus the incoming infrared plane wave at a specific point near the interface of GaAs substrate and HgCdTe absorber layer.

Keywords

II-VI semiconductors; III-V semiconductors; cadmium compounds; finite difference time-domain analysis; focal planes; gallium arsenide; infrared detectors; integrated optics; mercury compounds; microlenses; optical crosstalk; optical design techniques; Crosslight TCAD commercial software; GaAs; HgCdTe; IR detector pixels; absorber layer; crosstalk suppressing design; finite difference time domain; infrared focal plane arrays; microlenses; responsive photocurrent; Crosstalk; Detectors; Gallium arsenide; Lenses; Microoptics; Photoconductivity; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on

Conference_Location

Shanghai

ISSN

2158-3234

Print_ISBN

978-1-4673-1602-6

Type

conf

DOI

10.1109/NUSOD.2012.6316520

Filename

6316520