An 9-GHz silicon-on-insulator CMOS amplifier

Author

Barthel, Wolfgang ; Budde, Wolfram

Author_Institution

Inst. Mikroelektronische Schaltungen und Syst., Fraunhofer Gesellschaft, Dresden, Germany

Volume

2

fYear

1998

fDate

1998

Firstpage

27

Abstract

A high speed CMOS amplifier operating at 9 GHz is presented in this paper. The amplifier consists of four single cascode stages connected in series. On-chip spiral inductors operating at their resonant frequency serve as load elements of each cascode stage. Good input and output matching was obtained using inductor-capacitor matching networks. The circuit drains 56 mA from 4.2 V supply voltage. The gain is 25 dB at 9.3 GHz with a bandwidth of approximately 180 MHz

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; field effect MMIC; impedance matching; integrated circuit design; silicon-on-insulator; 180 MHz; 25 dB; 4.2 V; 56 mA; 9 to 9.3 GHz; SOI CMOS amplifier; Si; four single cascode stages; high speed CMOS amplifier; inductor load elements; inductor-capacitor matching networks; input matching; onchip spiral inductors; output matching; series connection; Dielectric substrates; Fingers; Frequency; Implants; MOS devices; Metallization; Noise figure; Scattering parameters; Silicon on insulator technology; Spirals;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 1998 IEEE International Conference on

Conference_Location

Lisboa

Print_ISBN

0-7803-5008-1

Type

conf

DOI

10.1109/ICECS.1998.814814

Filename

814814