A 1.8 GHz low-noise amplifier in CMOS/SIMOX technology

Author

Vorwerk, Matthias ; Eggert, Dietmar

Author_Institution

Fraunhofer Inst. for Microelectron. Circuits & Syst., Dresden, Germany

Volume

2

fYear

1998

fDate

1998

Firstpage

31

Abstract

A low-voltage low-noise amplifier fabricated in a CMOS/SIMOX technology is presented in this paper. Due to the dielectric isolation of the transistors, high resistivity substrates can be used. This also allows the integration of inductors and capacitors with quality factors suitable for the design of RF communication circuits. The center frequency of the presented amplifier is 1.8 GHz. Operating at 2 V supply voltage, the power gain is 16 dB, with a noise figure of 3.3 dB and the 1 dB compression point related to the output of 5 dBm. The power dissipation under these conditions amounts to 24 mW

Keywords

CMOS analogue integrated circuits; Q-factor; SIMOX; UHF amplifiers; UHF integrated circuits; equivalent circuits; integrated circuit design; integrated circuit modelling; integrated circuit noise; 1.8 GHz; 16 dB; 2 V; 24 mW; 3.3 dB; CMOS/SIMOX technology; RF communication circuit; SOI; Si; capacitors; dielectric isolation; high resistivity substrates; inductors; low-noise amplifier; low-voltage LNA; quality factors; CMOS technology; Capacitors; Circuits; Conductivity; Dielectric substrates; Inductors; Isolation technology; Low-noise amplifiers; Q factor; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 1998 IEEE International Conference on

Conference_Location

Lisboa

Print_ISBN

0-7803-5008-1

Type

conf

DOI

10.1109/ICECS.1998.814816

Filename

814816