• DocumentCode
    3497265
  • Title

    Simulation of carrier dynamics in graphene on a substrate at terahertz and mid-infrared frequencies

  • Author

    Sule, N. ; Willis, K.J. ; Hagness, S.C. ; Knezevic, I.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Wisconsin-Madison, Madison, WI, USA
  • fYear
    2012
  • fDate
    28-31 Aug. 2012
  • Firstpage
    79
  • Lastpage
    80
  • Abstract
    We calculate the complex conductivity of graphene in the terahertz (THz) to mid-infrared (mid-IR) frequency range using a numerical simulation that couples the two-dimensional (2D) ensemble Monte Carlo technique (EMC) for carrier transport, the three-dimensional (3D) finite-difference time-domain (FDTD) technique for electrodynamics, and molecular dynamics (MD) for short range Coulomb interactions. We demonstrate the effect of the typically used silicon-dioxide substrate on the high-frequency carrier dynamics in graphene and show good agreement between recent experimental results and our numerical simulations.
  • Keywords
    Monte Carlo methods; electrical conductivity; electrodynamics; finite difference time-domain analysis; graphene; high-frequency effects; molecular dynamics method; 2D ensemble Monte Carlo technique; 3D finite-difference time-domain technique; C; FDTD technique; SiO2; carrier transport; complex conductivity; electrodynamics; high-frequency carrier dynamics; mid-infrared frequency; molecular dynamics; numerical simulation; short range Coulomb interactions; silicon-dioxide substrate; terahertz frequency; Charge carrier density; Conductivity; Impurities; Scattering; Substrates; Time domain analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on
  • Conference_Location
    Shanghai
  • ISSN
    2158-3234
  • Print_ISBN
    978-1-4673-1602-6
  • Type

    conf

  • DOI
    10.1109/NUSOD.2012.6316524
  • Filename
    6316524