Title :
Non linear piezoelectricity in zincblende GaAs and InAs semiconductors
Author :
Tse, G. ; Pal, J. ; Garg, R. ; Haxha, V. ; Migliorato, M.A.
Author_Institution :
Sch. of Electr. & Electron. Eng., Univ. of Manchester, Manchester, UK
Abstract :
We investigate the strain dependence of piezoelectric effect, both linear and non linear, in zincblende GaAs and InAs semiconductors. We expanded the polarization in terms of the ionic and dipole charges, internal displacement and the exploited the ab-initio Density Functional Theory (DFT) to evaluate the dependence of all quantities on the strain tensor. By this detailed study of the non linear piezoelectric effect, we report that even third order effects are significant.
Keywords :
III-V semiconductors; ab initio calculations; density functional theory; dielectric polarisation; gallium arsenide; indium compounds; piezoelectric semiconductors; piezoelectricity; DFT; GaAs; InAs; ab-initio density functional theory; dipole charges; internal displacement; ionic charges; nonlinear piezoelectric effect; strain dependence; strain tensor; zincblende semiconductors; Discrete Fourier transforms; Gallium arsenide; Light emitting diodes; Piezoelectric effect; Strain; Tensile stress;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4673-1602-6
DOI :
10.1109/NUSOD.2012.6316527