DocumentCode :
3497459
Title :
InGaN nanorod LEDs: A performance assessment
Author :
Witzigmann, Bernd ; Deppner, Marcus ; Römer, Friedhard
Author_Institution :
Comput. Electron. & Photonics Group, Univ. of Kassel, Kassel, Germany
fYear :
2012
fDate :
28-31 Aug. 2012
Firstpage :
93
Lastpage :
94
Abstract :
Light Emitting Diodes (LEDs) have become an attractive concept as efficient light sources. In this contribution, the electro-optical performance of Ill-nitride based core-shell nanorod LEDs is investigated by detailed simulation. In contrast to their planar counterparts, they possess increased active region area on small footprint, non-polar active regions with c-plane vertical growth, and form horizontal two-dimensional active photonic crystals for the optical extraction process.
Keywords :
III-V semiconductors; electro-optical effects; gallium compounds; indium compounds; light emitting diodes; nanophotonics; nanorods; photonic crystals; wide band gap semiconductors; III-nitride; InGaN; c-plane vertical growth; core-shell nanorod LED; electro-optical performance; horizontal two-dimensional active photonic crystals; light emitting diodes; light sources; nonpolar active regions; optical extraction process; performance assessment; Geometry; Light emitting diodes; Optical polarization; Photonic crystals; Quantum well devices; Stimulated emission; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on
Conference_Location :
Shanghai
ISSN :
2158-3234
Print_ISBN :
978-1-4673-1602-6
Type :
conf
DOI :
10.1109/NUSOD.2012.6316531
Filename :
6316531
Link To Document :
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