DocumentCode :
3497470
Title :
Minimum supply voltage for sequential logic circuits in a 22nm technology
Author :
Chia-Hsiang Chen ; Bowman, Keith ; Augustine, Charles ; Zhengya Zhang ; Tschanz, James
Author_Institution :
Electr. Eng. & Comput. Sci. Dept., Univ. of Michigan, Ann Arbor, MI, USA
fYear :
2013
fDate :
4-6 Sept. 2013
Firstpage :
181
Lastpage :
186
Abstract :
The minimum supply voltage (Vmin) is explored for sequential logic circuits by statistically simulating the impact of within-die process variations and gate-dielectric soft breakdown on data retention and hold time. As supply voltage (Vcc) scales, statistical circuit simulations demonstrate that hold time increases faster than circuit delay or cycle time, consequently the required number of min-delay buffers increases. For this reason, a new hold-time violation metric defines Vmin as the Vcc in which the hold time exceeds a target percentage of the cycle time. Simulation results in a 22nm tri-gate CMOS technology indicate a data-retention Vmin of 0.61Vnorm and a hold-time Vmin of 0.73Vnorm, where Vnorm represents a normalized voltage for the process technology node. A key insight reveals that upsizing the first clock inverter in the sequential circuit reduces the hold-time Vmin by 18% and the overall Vmin by 16%.
Keywords :
CMOS logic circuits; circuit simulation; clocks; delays; logic design; logic gates; sequential circuits; circuit delay; clock inverter; cycle time; data retention; gate-dielectric soft breakdown; hold time violation metric; process technology node; sequential circuit; sequential logic circuits; size 22 nm; statistical circuit simulation; tri-gate CMOS technology; voltage 0.61 V; voltage 0.73 V; within-die process variations; Clocks; Delays; Electric breakdown; Inverters; Logic gates; Sequential circuits; Transistors; Logic Vmin; data retention; gate-dielectric soft breakdown; hold time; sequential circuit; within-die variation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Low Power Electronics and Design (ISLPED), 2013 IEEE International Symposium on
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-1234-6
Type :
conf
DOI :
10.1109/ISLPED.2013.6629291
Filename :
6629291
Link To Document :
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